STP80NF12 TO-220
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- Код товара
- 8075232634
- Артикул
- STP80NF12
- Бренд
- STMicroelectronics
- Case
- TO220-3
- Type:
- MOSFET
- Width
- 4.6mm
- Brand:
- STMicroelectronics
Цена по запросу
(от 610 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 120В, 60А, 300Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220-3 |
| Type: | MOSFET |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | STripFET |
| Series: | STP80NF12 |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 115 ns |
| Packaging: | Tube |
| Rise Time: | 145 ns |
| Technology | STripFET™ II |
| Tradename: | STripFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 60A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 300W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 189 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 18mΩ |
| Transistor Material | Si |
| Drain-source voltage | 120V |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 300 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 W |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 40 ns |
| Maximum Drain Source Voltage | 120 V |
| Typical Turn-Off Delay Time: | 134 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 80 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 80 S |
| Maximum Drain Source Resistance | 18 mΩ |
| Maximum Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |