STP80NF10FP, Trans MOSFET N-CH 100V 38A 3-Pin(3+Tab) TO-220FP Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001618413
- Артикул
- STP80NF10FP
- Бренд
- STMicroelectronics
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- STripFET II
- Series:
- STP80NF10FP
Цена по запросу
(от 220 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 100В 80A TO-220FP Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | STripFET II |
| Series: | STP80NF10FP |
| Pin Count | 3 |
| Fall Time: | 60 ns |
| Packaging: | Tube |
| Rise Time: | 80 ns |
| Tradename: | STripFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220FP |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 189 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 300 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 45 W |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 26 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 116 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 80 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 15 mΩ |
| Maximum Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 100 V |
| Максимальный ток сток-исток при 25 С Iси макс..А | 38 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 15 mOhms |