Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-220 STP6N95K5
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8021964643
- Артикул
- STP6N95K5
- Бренд
- STMicroelectronics
- Tab
- Tab
- ECCN
- EAR99
- PPAP
- No
- HTSUS
- 8541.29.0095
Цена по запросу
(от 570 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, SuperMESH5™, полевой, 950В, 6А, 90Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| HTSUS | 8541.29.0095 |
| Width | 4.6mm |
| Series | SuperMESH5в„ў -> |
| EU RoHS | Compliant with Exemption |
| Package | Tube |
| FET Type | N-Channel |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | В±30V |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| REACH Status | REACH Unaffected |
| Корпус | TO-220 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | SuperMESH |
| Vgs(th) (Max) @ Id | 5V @ 100ВµA |
| Структура | N-Channel |
| Base Product Number | STP6N95 -> |
| Forward Diode Voltage | 1.6V |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | TO |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 3A, 10V |
| Typical Fall Time (ns) | 21 |
| Typical Rise Time (ns) | 12 |
| Особенности | Enhancement Mode |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Power Dissipation (Max) | 90W (Tc) |
| Supplier Device Package | TO-220-3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 90 W |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 950V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ 10V (nC) | 13 |
| Typical Gate Charge @ Vgs (nC) | 13@10V |
| Maximum Drain Source Resistance | 1.25 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Voltage (V) | 950 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Typical Turn-Off Delay Time (ns) | 33 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 100V |
| Maximum Continuous Drain Current (A) | 9 |
| Typical Input Capacitance @ Vds (pF) | 450@100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 1250@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Current - Continuous Drain (Id) @ 25В°C | 9A (Tc) |
| Максимальное напряжение сток-исток Uси,В | 950 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 90 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |