STP55NF06 TO-220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075229672
- Артикул
- STP55NF06
- Бренд
- STMicroelectronics
- Type:
- MOSFET
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- STripFET II
Цена по запросу
(от 180 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 35А, 110Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | MOSFET |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | STripFET II |
| Тип | MOSFET |
| Series: | STP55NF06 |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | ±20V |
| Fall Time: | 15 ns |
| Packaging: | Tube |
| Rise Time: | 50 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | STripFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Мощность | рассеиваемая(Pd)-110 Вт |
| Описание | N-Channel 60 V 50A(Tc)110W(Tc)Through Hole TO-220 |
| Упаковка | TUBE, 50 шт. |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 44.5 nC |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Емкость, пФ | 1300 |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 27.5A, 10V |
| Pd - Power Dissipation: | 110 W |
| Power Dissipation (Max) | 110W(Tc) |
| Supplier Device Package | TO-220 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 110 W |
| Typical Gate Charge @ Vgs | 44.5 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 20 ns |
| Способ монтажа | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 36 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 50 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Maximum Drain Source Resistance | 18 mΩ |
| Тип проводимости | N |
| Maximum Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Заряд затвора, нКл | 60 |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Диапазон рабочих температур | -55…+175 °С |
| Максимальный ток стока (при Ta=25C), А | 50 |
| Максимально допустимое напряжение | затвор-исток(Vgs)±20 В |
| Транспортная упаковка: размер/кол-во | 60*50*50/1000 |
| MSL(Уровень чувствительности к влажности) | 1 |
| Минимальное сопротивление открытого канала, мОм | 18 |