Транзистор полевой STP42N65M5
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062671625
- Артикул
- STP42N65M5
- Бренд
- STMicroelectronics
- Type:
- Power MOSFETs
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- MDmesh M5
Цена по запросу
(от 2 040 ₽)
Минимальный заказ: 3 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 650В, 20,8А, 190Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | Power MOSFETs |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh M5 |
| Series: | Mdmesh M5 |
| Pin Count | 3 |
| Fall Time: | 13 ns |
| Packaging: | Tube |
| Rise Time: | 24 ns |
| Tradename: | MDmesh |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 98 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 190 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 190 W |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 61 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 65 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 33 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 79 mΩ |
| Maximum Continuous Drain Current | 33 A |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |