STP3NK90ZFP, Транзистор: N-MOSFET, полевой, 900В, 1,89А, 25Вт, TO220FP
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- Код товара
- 8030544602
- Артикул
- STP3NK90ZFP
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand
- STMicroelectronics
- Width
- 4.6mm
Цена по запросу
(от 140 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 900В, 1,89А, 25Вт, TO220FP Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand | STMicroelectronics |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| EU RoHS | Compliant with Exemption |
| Series: | STP3NK90ZFP |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 18 ns |
| Lead Shape | Through Hole |
| Mount Type | Through Hole |
| Packaging: | Tube |
| Rise Time: | 7 ns |
| Tradename: | SuperMESH |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220FP |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Корпус | to220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 22.7 nC |
| Forward Voltage Vf | 1.6V |
| Process Technology | SuperMESH |
| Структура | MOSFET |
| Automotive Standard | No |
| Number of Channels: | 1 Channel |
| Standards/Approvals | No |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 7 |
| Особенности | - |
| Pd - Power Dissipation: | 25 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 25 W |
| Typical Gate Charge @ Vgs | 22.7 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 18 ns |
| Maximum Drain Source Voltage | 900 V |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 22.7nC |
| Typical Turn-Off Delay Time: | 45 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 3 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 25000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 22.7 |
| Typical Gate Charge @ Vgs (nC) | 22.7@10V |
| Maximum Drain Source Resistance | 4.8 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Source Voltage Vgs | 30 V |
| Typical Turn-On Delay Time (ns) | 18 |
| кол-во в упаковке | 50 |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Voltage (V) | 900 |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Power Dissipation - (mW) | 25000 |
| Typical Gate Charge @ 10V - (nC) | 22.7 |
| Typical Gate Charge @ Vgs - (nC) | 22.7@10V |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Gate Source Voltage - (V) | ??30 |
| Rds On - Drain-Source Resistance: | 4.8 Ohms |
| Maximum Drain Source Voltage - (V) | 900 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Resistance Rds | 4.8Ω |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Maximum Gate Threshold Voltage - (V) | 4.5 |
| Typical Input Capacitance @ Vds (pF) | 590@25V |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Maximum Continuous Drain Current - (A) | 3 |
| Maximum Drain Source Resistance (mOhm) | 4800@10V |
| Typical Input Capacitance @ Vds - (pF) | 590@25V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Drain Source Resistance - (mOhm) | 4800@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Крутизна характеристики, S | 2.7 S |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 900 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.89 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |