STP3NK60Z, MOSFETs N-Ch 600 Volt 2.4 A Zener SuperMESH
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004830180
- Артикул
- STP3NK60Z
- Бренд
- STMicroelectronics
- HTS
- 8541.10.00.80
- Tab
- Tab
- Type:
- MOSFET
- Brand:
- STMicroelectronics
Цена по запросу
(от 300 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 600В, 1,51А, 45Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.10.00.80 |
| Tab | Tab |
| Type: | MOSFET |
| Brand: | STMicroelectronics |
| EU RoHS | Compliant with Exemption |
| Series: | STP3NK60Z |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 14 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 14 ns |
| Tradename: | SuperMESH |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Package Width | 4.6(Max) |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 9.15(Max) |
| Package Length | 10.4(Max) |
| Mounting Style: | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.8 nC |
| Process Technology | SuperMESH |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 14 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 45 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 19 ns |
| Id - Continuous Drain Current: | 2.4 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 45000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 11.8 |
| Typical Gate Charge @ Vgs (nC) | 11.8@10V |
| Forward Transconductance - Min: | 1.8 S |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Rds On - Drain-Source Resistance: | 3.6 Ohms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.4 |
| Typical Input Capacitance @ Vds (pF) | 311@25V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Drain Source Resistance (mOhm) | 3600@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.4 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 45 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 3.6 Ом |