STP3N150, Транзистор N-МОП, полевой, 1500В, 1,6А, 140Вт, TO220-3
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- Код товара
- 8075481889
- Артикул
- STP3N150
- Бренд
- STMicroelectronics
- Case
- TO220-3
- Width
- 4.6mm
- Series
- MDmesh
- Version
- N channel
Цена по запросу
(от 565,21 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 1500В, 1,6А, 140Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220-3 |
| Width | 4.6mm |
| Series | MDmesh |
| Version | N channel |
| Assembly | THT |
| Mounting | THT |
| Enclosure | TO-220 |
| Pin Count | 3 |
| Power loss | 63 W |
| Technology | PowerMesh™ |
| Вес, г | 2.7 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Max. current | 2.5 A |
| Package Type | TO-220 |
| Polarisation | unipolar |
| max. Voltage | 1500 V |
| Drain current | 1.6A |
| Mounting Type | Through Hole |
| Kind of channel | enhanced |
| Kind of package | tube |
| Power dissipation | 140W |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| On-state resistance | 9Ω |
| Transistor Material | Si |
| Drain-source voltage | 1.5kV |
| Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 140 W |
| Typical Gate Charge @ Vgs | 29.3 nC @ 10 V |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1500 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 9 Ω |
| Maximum Continuous Drain Current | 2.5 A |