Транзистор полевой STP36NF06L
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055405028
- Артикул
- STP36NF06L
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- Unknown
- Width
- 4.6mm
- Series
- STripFET
Цена по запросу
(от 480 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 60В 30A 70Вт 0,048Ом TO220 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Width | 4.6mm |
| Series | STripFET |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Configuration | Single |
| Mounting Type | Through Hole |
| RoHS Compliant | Yes |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | STripFET II |
| Transistor Material | Si |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 80 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 70 W |
| Typical Gate Charge @ Vgs | 13 nC @ 5 V |
| Supplier Temperature Grade | Automotive |
| Maximum Gate Source Voltage | -18 V, +18 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation (mW) | 70000 |
| Minimum Gate Threshold Voltage | 1V |
| Typical Gate Charge @ Vgs (nC) | 13@5V |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Gate Source Voltage (V) | ±18 |
| Typical Output Capacitance (pF) | 170 |
| Typical Turn-On Delay Time (ns) | 10 |
| кол-во в упаковке | 50 |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 4.2 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Typical Gate to Drain Charge (nC) | 7.8 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 4.2 |
| Typical Reverse Recovery Time (ns) | 55 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 660@25V |
| Typical Reverse Recovery Charge (nC) | 107 |
| Maximum Drain Source Resistance (MOhm) | 40@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 18 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 120 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 70@25V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 70 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |