STP33N60M2, Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002181571
- Артикул
- STP33N60M2
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- Series
- MDmesh™ II Plus
Цена по запросу
(от 390 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 26A с 3-контактным разъемом (3+ Tab) для трубки TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| Series | MDmesh™ II Plus |
| Series: | STP33N60M2 |
| FET Type | N-Channel |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | ±25V |
| Automotive | No |
| Fall Time: | 9 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 9.6 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | MDmesh |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category | Power MOSFET |
| Standard Package | 1 |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 45.5 nC |
| Process Technology | MDmesh II |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | TO-220 |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 13A, 10V |
| Typical Fall Time (ns) | 9 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 190 W |
| Power Dissipation (Max) | 190W(Tc) |
| Supplier Device Package | TO-220 |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Gate Charge (Qg) (Max) @ Vgs | 45.5nC @ 10V |
| Typical Turn-Off Delay Time: | 109 ns |
| Drain to Source Voltage (Vdss) | 600V |
| Id - Continuous Drain Current: | 26 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 45.5 |
| Typical Gate Charge @ Vgs (nC) | 45.5@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 109 |
| Rds On - Drain-Source Resistance: | 108 mOhms |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 1781pF @ 100V |
| Maximum Continuous Drain Current (A) | 26 |
| Typical Input Capacitance @ Vds (pF) | 1781@100V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 125@10V |
| Current - Continuous Drain (Id) @ 25°C | 26A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 26 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |