MDmesh, SuperMESH N-Channel MOSFET, 2.1 A, 900 V, 3-Pin TO-220 STP2NK90Z
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8039016406
- Артикул
- STP2NK90Z
- Бренд
- STMicroelectronics
- Type:
- MOSFET
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- MDmesh, SuperMESH
Цена по запросу
(от 370 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 900В, 1,3А, 70Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | MOSFET |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Pin Count | 3 |
| Fall Time: | 40 ns |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Вес, г | 5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | Transistors |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 19.5 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1000 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 70 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 70 W |
| Typical Gate Charge @ Vgs | 19.5 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 21 ns |
| Maximum Drain Source Voltage | 900 V |
| Typical Turn-Off Delay Time: | 43 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 2.1 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2.3 S |
| Maximum Drain Source Resistance | 6.5 Ω |
| Maximum Continuous Drain Current | 2.1 A |
| Rds On - Drain-Source Resistance: | 6.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Максимальное напряжение сток-исток Uси,В | 900 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.1 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 70 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |