STP2NK100Z, Транзистор N-МОП, полевой, 1000В 1,85A 70Вт 8,5Ом TO220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072919873
- Артикул
- STP2NK100Z
- Бренд
- STMicroelectronics
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 1 510 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 1000В 1,85A 70Вт 8,5Ом TO220
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.6(Max) |
| Package Height | 9.15(Max) |
| Package Length | 10.4(Max) |
| EDA / CAD Models | STP2NK100Z by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Process Technology | SuperMESH |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 32.5 |
| Typical Rise Time (ns) | 6.5 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 70000 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 7.2 |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Turn-Off Delay Time (ns) | 41.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.85 |
| Typical Input Capacitance @ Vds (pF) | 499@25V |
| Maximum Drain Source Resistance (MOhm) | 8500@10V |