Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014519753
- Артикул
- STP26N60DM6
- Бренд
- STMicroelectronics
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Pin Count
- 3
- Fall Time:
- 8 ns
Цена по запросу
(от 1 144,92 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, MDmesh™ DM6, полевой, 600В, 11А, Idm: 60А Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Pin Count | 3 |
| Fall Time: | 8 ns |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Tradename: | MDmesh |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.6V |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 130 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 110 W |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | ±25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 39 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 18 A |
| Maximum Gate Threshold Voltage | 4.75V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3.25V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 195 mΩ |
| Maximum Continuous Drain Current | 15 A |
| Rds On - Drain-Source Resistance: | 195 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.25 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 15 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |