STP21NM60ND, Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001090329
- Артикул
- STP21NM60ND
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Military
- No
Цена по запросу
(от 650 ₽)
Минимальный заказ: 47 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 600V 17A с 3-контактным разъемом (3+Tab) для трубки TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Корпус | TO-220AB |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | FDmesh II |
| Структура | N-Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 48 |
| Typical Rise Time (ns) | 16 |
| Особенности | высоковольтный |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Maximum Power Dissipation (mW) | 140000 |
| Typical Gate Charge @ 10V (nC) | 60 |
| Typical Gate Charge @ Vgs (nC) | 60 10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Power Dissipation - (mW) | 140000 |
| Typical Gate Charge @ 10V - (nC) | 60 |
| Typical Gate Charge @ Vgs - (nC) | 60@10V |
| Typical Turn-Off Delay Time (ns) | 70 |
| Maximum Gate Source Voltage - (V) | ??25 |
| Maximum Drain Source Voltage - (V) | 600 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 17 |
| Maximum Gate Threshold Voltage - (V) | 5 |
| Typical Input Capacitance @ Vds (pF) | 1800 50V |
| Maximum Continuous Drain Current - (A) | 17 |
| Maximum Drain Source Resistance (mOhm) | 220 10V |
| Typical Input Capacitance @ Vds - (pF) | 1800@50V |
| Maximum Drain Source Resistance - (mOhm) | 220@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |