STP20NM60FD TO220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075231174
- Артикул
- STP20NM60FD
- Бренд
- STMicroelectronics
- Case
- TO220-3
- Type
- null
- Series
- FDmesh
- Mounting
- THT
Цена по запросу
(от 240 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 600В, 12,6А, 45Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220-3 |
| Type | null |
| Series | FDmesh |
| Mounting | THT |
| Pin Count | 3 |
| Technology | FDmesh™ |
| Вес, г | 2 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220 |
| Polarisation | unipolar |
| Drain current | 12.6A |
| Mounting Type | Through Hole |
| Kind of channel | enhanced |
| Kind of package | tube |
| Power dissipation | 45W |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| On-state resistance | 0.29Ω |
| Transistor Material | Si |
| Drain-source voltage | 600V |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 192W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 192 W |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 37nC@10V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.3nF@25V |
| Maximum Drain Source Voltage | 600 V |
| Continuous Drain Current (Id) | 20A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 290 mΩ |
| Maximum Continuous Drain Current | 20 A |