STP20N95K5, Транзистор N-МОП, полевой, 950В 17,5A 250Вт 0,33Ом TO220
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- Код товара
- 8024497665
- Артикул
- STP20N95K5
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Width
- 4.6mm
- Brand:
- STMicroelectronics
Цена по запросу
(от 1 050 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 950В 17,5A 250Вт 0,33Ом TO220 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| EU RoHS | Compliant with Exemption |
| Series: | STP20N95K5 |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Tradename: | MDmesh |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Корпус | to220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Структура | N-МОП |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.5V |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 9 |
| Особенности | - |
| Pd - Power Dissipation: | 250 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 W |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 950 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 17.5 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
| Maximum Drain Source Resistance | 330 mΩ |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Continuous Drain Current | 17.5 A |
| Maximum Drain Source Voltage (V) | 950 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Rds On - Drain-Source Resistance: | 330 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 17.5 |
| Typical Input Capacitance @ Vds (pF) | 1550@100V |
| Vds - Drain-Source Breakdown Voltage: | 950 V |
| Maximum Drain Source Resistance (mOhm) | 330@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -30 V, +30 V |
| Максимальное напряжение сток-исток Uси,В | 950 V |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 250 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 330 mOhms |