STP200NF03, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066940191
- Артикул
- STP200NF03
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Through Hole
Цена по запросу
(от 340,99 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 120A с 3-контактным разъемом (3+ вкладки) для трубки TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | StripFET III |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 60 |
| Typical Rise Time (ns) | 195 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Gate Charge @ 10V (nC) | 113 |
| Typical Gate Charge @ Vgs (nC) | 113@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 120 |
| Typical Input Capacitance @ Vds (pF) | 4950@25V |
| Maximum Drain Source Resistance (mOhm) | 3.6@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |