STP18NM80, Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001214850
- Артикул
- STP18NM80
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 691 ₽)
Минимальный заказ: 30 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 800В, 10,71А, 190Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 50 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 28 ns |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 70 nC |
| Process Technology | MDmesh |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Factory Pack Quantity: | 1000 |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 28 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 190 W |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 18 ns |
| Typical Turn-Off Delay Time: | 96 ns |
| Id - Continuous Drain Current: | 17 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Operating Temperature: | -65 C |
| Typical Gate Charge @ 10V (nC) | 70 |
| Typical Gate Charge @ Vgs (nC) | 70@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 96 |
| Rds On - Drain-Source Resistance: | 295 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 17 |
| Typical Input Capacitance @ Vds (pF) | 2070@50V |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Maximum Drain Source Resistance (mOhm) | 295@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 800 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |