STP18N60M2, Power MOSFET, N Channel, 600 V, 13 A, 0.255 ohm, TO-220AB, Through Hole
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- Код товара
- 8359855033
- Артикул
- STP18N60M2
- Бренд
- STMicroelectronics
- Case
- TO220-3
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- MDmesh M2
Цена по запросу
(от 445 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, MDmesh™ || Plus, полевой, 650В, 8А, Idm: 52А Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220-3 |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh M2 |
| Series: | STP18N60M2 |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 10.6 ns |
| Packaging: | Tube |
| Rise Time: | 9 ns |
| Technology | MDmesh™ || Plus |
| Tradename: | MDmesh |
| Вес, г | 2.7 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Drain current | 8A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 110W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 21.5 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±25V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.28Ω |
| Transistor Material | Si |
| Drain-source voltage | 650V |
| Pulsed drain current | 52A |
| Transistor Polarity: | N-Channel |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 110 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 110 W |
| Typical Gate Charge @ Vgs | 21.5 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 47 ns |
| Maximum Operating Temperature | +150 °C |
| Id - Continuous Drain Current: | 13 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 280 mΩ |
| Maximum Continuous Drain Current | 13 A |
| Features of semiconductor devices | ESD protected gate |
| Rds On - Drain-Source Resistance: | 255 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.255 Ом |