STP14NK50Z, Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001069974
- Артикул
- STP14NK50Z
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type:
- MOSFET
- Width
- 4.6mm
Цена по запросу
(от 479 ₽)
Минимальный заказ: 62 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 500В, 7,6А, 150Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | MOSFET |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| EU RoHS | Compliant with Exemption |
| Series: | STP14NK50Z |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 12 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 16 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 69 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 16 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 150 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 69 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 24 ns |
| Maximum Drain Source Voltage | 500 V |
| Typical Turn-Off Delay Time: | 54 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 14 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 150000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 69 |
| Typical Gate Charge @ Vgs (nC) | 69 10V |
| Forward Transconductance - Min: | 12 S |
| Maximum Drain Source Resistance | 380 mΩ |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 24 |
| кол-во в упаковке | 50 |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 54 |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14 |
| Typical Input Capacitance @ Vds (pF) | 2000 25V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Maximum Drain Source Resistance (mOhm) | 380 10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 14 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 150 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |