Транзистор полевой STP140NF75
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- Код товара
- 8055405040
- Артикул
- STP140NF75
- Бренд
- STMicroelectronics
- RoHS
- Details
- Type
- MOSFET
- Brand
- STMicroelectronics
- Type:
- MOSFET
Цена по запросу
(от 640 ₽)
Минимальный заказ: 3 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 75В, 100А, 310Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | STMicroelectronics |
| Type: | MOSFET |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Height | 9.15 mm |
| Length | 10.4 mm |
| Series | STripFET II |
| Series: | STP140NF75 |
| Fall Time | 90 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 140 ns |
| Fall Time: | 90 ns |
| Packaging: | Tube |
| Rise Time: | 140 ns |
| Technology | Si |
| Вес, г | 1 |
| Technology: | Si |
| Unit Weight | 0.050717 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 218 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 310 W |
| Особенности | - |
| Pd - Power Dissipation: | 310 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 310 W |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 30 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 130 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Maximum Drain Source Voltage | 75 V |
| Typical Turn-Off Delay Time: | 130 ns |
| Id - Continuous Drain Current | 120 A |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Transconductance - Min | 160 S |
| Id - Continuous Drain Current: | 120 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 160 S |
| Maximum Drain Source Resistance | 8 mΩ |
| Maximum Continuous Drain Current | 120 A |
| Rds On - Drain-Source Resistance | 7.5 mOhms |
| Rds On - Drain-Source Resistance: | 7.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 310 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |