STP11NM60ND, Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001067533
- Артикул
- STP11NM60ND
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- STMicroelectronics
Цена по запросу
(от 270 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 600В, 6,3А, 90Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 4.6 mm |
| Height | 9.15 mm |
| Length | 10.4 mm |
| Series | N-channel MDmesh |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Fall Time | 9 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 7 ns |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220 |
| Корпус | TO-220AB |
| Configuration | Single |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Number of Channels | 1 Channel |
| Process Technology | FDmesh II |
| Структура | N-Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 90 W |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 7 |
| Особенности | высоковольтный |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 90 W |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Vgs - Gate-Source Voltage | 25 V |
| Typical Turn-On Delay Time | 16 ns |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 50 ns |
| Maximum Drain Source Voltage | 600 V |
| Id - Continuous Drain Current | 10 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ 10V (nC) | 30 |
| Typical Gate Charge @ Vgs (nC) | 30@10V |
| Maximum Drain Source Resistance | 450 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage (V) | 600 |
| Rds On - Drain-Source Resistance | 450 mOhms |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10 |
| Operating Junction Temperature (°C) | 150 |
| Typical Input Capacitance @ Vds (pF) | 850@50V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Maximum Drain Source Resistance (mOhm) | 450@10V |
| Maximum Positive Gate Source Voltage (V) | 25 |
| Крутизна характеристики, S | 7.5 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 90 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±25В |