STP11NM60FDFP, STP11NM60FDFP STMicroelectronics MOSFETs Transistor N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube - Arrow.com
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001100869
- Артикул
- STP11NM60FDFP
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- Series:
- STP11NM60FD
Цена по запросу
(от 500 ₽)
Минимальный заказ: 62 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STP11NM60FDFP STMicroelectronics MOSFETs Транзистор N-CH 600V 11A 3-контактный (3 + вкладки) TO-220FP Трубка - Arrow.com
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| Series: | STP11NM60FD |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 15 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 16 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 16 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 35 W |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 35000 |
| Minimum Operating Temperature: | -65 C |
| Typical Gate Charge @ 10V (nC) | 28 |
| Typical Gate Charge @ Vgs (nC) | 28@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 600 |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 11 |
| Typical Input Capacitance @ Vds (pF) | 900@25V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Drain Source Resistance (mOhm) | 450@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |