STP11NM60, MOSFETs N-Ch 600 Volt 11 Amp
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004830071
- Артикул
- STP11NM60
- Бренд
- STMicroelectronics
- Case
- TO220-3
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Type:
- MOSFET
Цена по запросу
(от 476,54 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 650 В 11 А (Tc) 160 Вт (Tc) со сквозным отверстием TO-220AB
Технические параметры
| Case | TO220-3 |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Type: | MOSFET |
| Brand: | STMicroelectronics |
| Series | MDmeshв„ў -> |
| Package | Tube |
| Series: | STP11NM60 |
| FET Type | N-Channel |
| Mounting | THT |
| Vgs (Max) | В±25V |
| Fall Time: | 11 ns |
| Packaging: | Tube |
| Rise Time: | 20 ns |
| Technology | MOSFET (Metal Oxide) |
| Tradename: | MDmesh |
| Вес, г | 1.95 |
| Gate charge | 30nC |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Type | N Channel |
| Manufacturer | STMicroelectronics |
| Polarisation | unipolar |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 11A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 160Вт |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Структура | N-Channel |
| Base Product Number | STP11 -> |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.45Ω |
| Drain-source voltage | 600V |
| Pulsed drain current | 44A |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| Особенности | - |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Pd - Power Dissipation: | 160 W |
| Power Dissipation (Max) | 160W (Tc) |
| Supplier Device Package | TO-220AB |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 20 ns |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Typical Turn-Off Delay Time: | 6 ns |
| Drain to Source Voltage (Vdss) | 650V |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Forward Transconductance - Min: | 5.2 S |
| Drain Source On State Resistance | 0.4Ом |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Непрерывный Ток Стока | 11А |
| Current - Continuous Drain (Id) @ 25В°C | 11A (Tc) |
| Рассеиваемая Мощность | 160Вт |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4В |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 600В |
| Стиль Корпуса Транзистора | TO-220AB |
| Максимальная Рабочая Температура | 150 C |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Сопротивление во Включенном Состоянии Rds(on) | 0.4Ом |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |