STP110N8F6 TO-220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075231215
- Артикул
- STP110N8F6
- Бренд
- STMicroelectronics
- Brand
- STMicroelectronics
- Series
- STP110N8F6
- Fall Time
- 48 ns
- Rise Time
- 61 ns
Цена по запросу
(от 250 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор MOSFETs 80V 110A 6.5m-@10V,55A 200W 4
Технические параметры
| Brand | STMicroelectronics |
| Series | STP110N8F6 |
| Fall Time | 48 ns |
| Rise Time | 61 ns |
| Tradename | STripFET |
| Technology | Si |
| Вес, г | 1 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Manufacturer | STMicroelectronics |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Type | 1 N-Channel Power MOSFET |
| Product Category | MOSFET |
| Qg - Gate Charge | 150 nC |
| Number Of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 200 W |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 24 ns |
| Typical Turn-Off Delay Time | 162 ns |
| Id - Continuous Drain Current | 110 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |