STP110N8F6, Транзистор MOSFETs 80V 110A 6.5m-@10V,55A 200W 4
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- Код товара
- 8015777485
- Артикул
- STP110N8F6
- Бренд
- STMicroelectronics
- Brand
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series
- STP110N8F6
- Series:
- STP110N8F6
Цена по запросу
(от 142,33 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор MOSFETs 80V 110A 6.5m-@10V,55A 200W 4
Технические параметры
| Brand | STMicroelectronics |
| Brand: | STMicroelectronics |
| Series | STP110N8F6 |
| Series: | STP110N8F6 |
| Fall Time | 48 ns |
| Rise Time | 61 ns |
| Tradename | STripFET |
| Fall Time: | 48 ns |
| Packaging: | Tube |
| Rise Time: | 61 ns |
| Technology | Si |
| Tradename: | STripFET |
| Вес, г | 2.5 |
| Subcategory | MOSFETs |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | STMicroelectronics |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type | 1 N-Channel Power MOSFET |
| Product Category | MOSFET |
| Qg - Gate Charge | 150 nC |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 150 nC |
| Number Of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 200 W |
| Особенности | - |
| Pd - Power Dissipation: | 200 W |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 24 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 162 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Typical Turn-Off Delay Time: | 162 ns |
| Id - Continuous Drain Current | 110 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 110 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| Rds On - Drain-Source Resistance: | 6.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение сток-исток Uси,В | 80 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 110 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 200 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 100мОм |