STP110N10F7, Power MOSFET, N Channel, 100 V, 110 A, 0.0051 ohm, TO-220AB, Through Hole
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- Код товара
- 8001584067
- Артикул
- STP110N10F7
- Бренд
- STMicroelectronics
- Width
- 4.6mm
- Brand:
- STMicroelectronics
- Series
- STripFET H7
- Series:
- STP110N10F7
Цена по запросу
(от 552 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 100В 110A 150Вт 0,007Ом TO220
Технические параметры
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | STripFET H7 |
| Series: | STP110N10F7 |
| Product: | Power MOSFETs |
| Pin Count | 3 |
| Packaging: | Tube |
| Tradename: | STripFET |
| Вес, г | 2.3 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 150 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 110 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 7 mΩ |
| Maximum Continuous Drain Current | 110 A |
| Rds On - Drain-Source Resistance: | 7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 110 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0051 Ом |