STN1NK80Z, , Транзистор полевой , N-канальный, 800В, 2.5Вт, корпус SOT-223
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026343776
- Артикул
- STN1NK80Z
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type:
- Power MOSFET
- Width
- 3.5mm
Цена по запросу
(от 26 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 800В, 160мА, 2,5Вт, SOT223
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | Power MOSFET |
| Width | 3.5mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Тип | MOSFET |
| EU RoHS | Compliant with Exemption |
| Series: | STN1NK80Z |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | ±30V |
| Automotive | No |
| Fall Time: | 55 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 30 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Configuration | Single Dual Drain |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Transistor Type: | 1 N-Channel MOSFET |
| Описание | N-Channel 800 V 250mA(Tc)2.5W(Tc)Surface Mount SOT-223 |
| Упаковка | REEL, 4000 шт. |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.7 nC |
| Process Technology | SuperMESH |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Емкость, пФ | 160 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | SOT |
| Rds On (Max) @ Id, Vgs | 16Ohm @ 500mA, 10V |
| Typical Fall Time (ns) | 55 |
| Typical Rise Time (ns) | 30 |
| Pd - Power Dissipation: | 2.5 W |
| Power Dissipation (Max) | 2.5W(Tc) |
| Supplier Device Package | SOT-223 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Способ монтажа | поверхностный(SMT) |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Maximum Drain Source Voltage | 800 V |
| Typical Turn-Off Delay Time: | 22 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 800 V |
| Id - Continuous Drain Current: | 250 mA |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V |
| Forward Transconductance - Min: | 0.8 S |
| Maximum Drain Source Resistance | 16 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 8 |
| Тип проводимости | N |
| кол-во в упаковке | 4000 |
| Maximum Continuous Drain Current | 250 mA |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Rds On - Drain-Source Resistance: | 16 Ohms |
| Заряд затвора, нКл | 7.7 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
| Maximum Continuous Drain Current (A) | 0.25 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 160@25V |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 16000@10V |
| Current - Continuous Drain (Id) @ 25°C | 250mA(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Диапазон рабочих температур | -55…+150 °С |
| Максимальный ток стока (при Ta=25C), А | 0.25 |
| Транспортная упаковка: размер/кол-во | 60*40*40/4000 |
| MSL(Уровень чувствительности к влажности) | 1 |