STL8N6LF6AG, Transistor: N-MOSFET; unipolar
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8059528697
- Артикул
- STL8N6LF6AG
- Бренд
- STMicroelectronics
- PPAP
- Unknown
- Family
- STL8N6LF6AG
- RDS-on
- 27@10V MOhm
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 660 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 32A Автомобильный 8-контактный разъем питания EP T/ R
Технические параметры
| PPAP | Unknown |
| Family | STL8N6LF6AG |
| RDS-on | 27@10V MOhm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Lead Free | Yes |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Screening Level | Automotive |
| Product Category | Power MOSFET |
| Supplier Package | Power Flat EP |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time | 7 ns |
| Typical Rise Time | 20 ns |
| Process Technology | STripFET |
| Operating Temperature | -55 to 175 °C |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 20 |
| Supplier Temperature Grade | Automotive |
| Typical Turn-On Delay Time | 9.6 ns |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 56 ns |
| Maximum Drain Source Voltage | 60 V |
| Maximum Power Dissipation (mW) | 4800 |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9.6 |
| Maximum Continuous Drain Current | 32 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 56 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 32 |
| Typical Input Capacitance @ Vds (pF) | 1340@25V |
| Maximum Drain Source Resistance (mOhm) | 27@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |