STL8N10LF3, Transistor: N-MOSFET; unipolar

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8031039005
- Артикул
- STL8N10LF3
- Бренд
- STMicroelectronics
- HTS
- 8541.29.00.95
- PPAP
- Unknown
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 330 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Вес, г | 0.35 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Polarisation | unipolar |
| Configuration | Single Quad Drain Triple Source |
| Package Height | 0.95(Max) |
| Package Length | 5.2 |
| Kind of channel | enhanced |
| Kind of package | tape |
| EDA / CAD Models | STL8N10LF3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | Power Flat |
| Maximum IDSS (uA) | 1 |
| Process Technology | STripFET F3 |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5.2 |
| Typical Rise Time (ns) | 9.6 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 70000 |
| Typical Gate Charge @ 10V (nC) | 20.5 |
| Typical Gate Charge @ Vgs (nC) | 20.5@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8.7 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 50.6 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 20 |
| Typical Input Capacitance @ Vds (pF) | 970@25V |
| Maximum Drain Source Resistance (mOhm) | 35@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |