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STL8N10LF3, Transistor: N-MOSFET; unipolar

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8031039005
Артикул
STL8N10LF3
Бренд
STMicroelectronics
HTS
8541.29.00.95
PPAP
Unknown
SVHC
Yes
EU RoHS
Compliant with Exemption
Цена по запросу
(от 330 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

HTS8541.29.00.95
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeNo Lead
Вес, г0.35
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ManufacturerSTMicroelectronics
Polarisationunipolar
ConfigurationSingle Quad Drain Triple Source
Package Height0.95(Max)
Package Length5.2
Kind of channelenhanced
Kind of packagetape
EDA / CAD ModelsSTL8N10LF3 by Ultra Librarian
Product CategoryPower MOSFET
Supplier PackagePower Flat
Maximum IDSS (uA)1
Process TechnologySTripFET F3
Type of transistorN-MOSFET
СтруктураMOSFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5.2
Typical Rise Time (ns)9.6
Особенности-
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)70000
Typical Gate Charge @ 10V (nC)20.5
Typical Gate Charge @ Vgs (nC)20.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.7
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)50.6
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)970@25V
Maximum Drain Source Resistance (mOhm)35@10V
Maximum Gate Source Leakage Current (nA)100
Максимальное напряжение затвор-исток Uзи макс.,В±20В