STL7N10F7, Transistor: N-MOSFET; unipolar
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062059222
- Артикул
- STL7N10F7
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Fall Time:
- 4.6 ns
- Rise Time:
- 14 ns
- Вес, г
- 1
Цена по запросу
(от 70 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STMicroelectronics STripFET VII Силовые МОП-транзисторы
Технические параметры
| Brand: | STMicroelectronics |
| Fall Time: | 4.6 ns |
| Rise Time: | 14 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Package/Case: | PowerFLAT-3.3x3.3-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 14 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2.9 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9.8 ns |
| Typical Turn-Off Delay Time: | 14.8 ns |
| Id - Continuous Drain Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |