STL70N4LLF5, MOSFETs N-Ch 40V 18A Mosfet PowerFLAT STripFET V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004828772
- Артикул
- STL70N4LLF5
- Бренд
- STMicroelectronics
- HTS
- COMPONENTS
- PPAP
- Unknown
- RoHS
- Details
- SVHC
- Yes
Цена по запросу
(от 175,69 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильный 8-контактный разъем питания Trans MOSFET N-CH 40V 70A Плоский T/R
Технические параметры
| HTS | COMPONENTS |
| PPAP | Unknown |
| RoHS | Details |
| SVHC | Yes |
| Type | Power Mosfet |
| Brand | STMicroelectronics |
| Type: | Power MOSFET |
| Brand: | STMicroelectronics |
| Series | N-channel STripFET |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Technology | Si |
| Вес, г | 0.08 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | STMicroelectronics |
| Package Width | 6 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | PowerFLAT-5x6-8 |
| Package Height | 0.81 |
| Package Length | 5 |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerFLAT-5x6-8 |
| EDA / CAD Models | STL70N4LLF5 by Ultra Librarian |
| Product Category | MOSFET |
| Qg - Gate Charge | 13 nC |
| Supplier Package | Power Flat |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 13 nC |
| Process Technology | STripFET V |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 4 W, 60 W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5.2 |
| Typical Rise Time (ns) | 42 |
| Особенности | - |
| Pd - Power Dissipation: | 72 W |
| Vgs - Gate-Source Voltage | 22 V |
| Vgs - Gate-Source Voltage: | -22 V, +22 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current | 18 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 72000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 12.9@4.5V |
| Maximum Gate Source Voltage (V) | ±22 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 40 |
| Rds On - Drain-Source Resistance | 6.1 mOhms |
| Typical Turn-Off Delay Time (ns) | 37 |
| Rds On - Drain-Source Resistance: | 6.1 mOhms |
| Maximum Gate Threshold Voltage (V) | 1(Min) |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 70 |
| Typical Input Capacitance @ Vds (pF) | 1570@25V |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 6.7@10V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | -30 V, +30 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 18 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |