STL45N65M5, PowerFLAT-HV(8x8) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025033354
- Артикул
- STL45N65M5
- Бренд
- STMicroelectronics
- PPAP
- No
- Series
- MDmeshв(ў V
- FET Type
- N-Channel
- Material
- Si
Цена по запросу
(от 1 190 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор MDmesh M5 мощностью 650 В, тип 0,075 Ом, 22,5 А в корпусе PowerFLAT 8x8 HV
Технические параметры
| PPAP | No |
| Series | MDmeshв(ў V |
| FET Type | N-Channel |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Cut Tape(CT) |
| Pin Count | 4 |
| Vgs (Max) | В±25V |
| Automotive | No |
| Lead Shape | No Lead |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.25 |
| FET Feature | - |
| PCB changed | 4 |
| Part Status | Active |
| Manufacturer | STMicroelectronics |
| Configuration | Single Triple Source |
| Mounting Type | Surface Mount |
| Package Width | 8 mm |
| Package / Case | 8-PowerVDFN |
| Package Length | 8 mm |
| Base Part Number | STL45 |
| Product Category | Power MOSFET |
| Supplier Package | Power Flat EP |
| Process Technology | MDmesh |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Структура | MOSFET |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 14.5A, 10V |
| Особенности | - |
| Power Dissipation (Max) | 2.8W(Ta), 160W(Tc) |
| Supplier Device Package | PowerFLATв(ў(8x8) |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Gate Charge @ 10V (nC) | 82 |
| Typical Gate Charge @ Vgs (nC) | 82@10V |
| Maximum Gate-Source Voltage (V) | ±25 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 3470pF @ 100V |
| Typical Input Capacitance @ Vds (pF) | 3470@100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain-Source Resistance (mOhm) | 86@10V |
| Current - Continuous Drain (Id) @ 25В°C | 3.8A(Ta), 22.5A(Tc) |
| Пороговое напряжение на затворе | -25 V, +25 V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 160 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |