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STL140N4F7AG, MOSFETs Automotive-grade N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET i

STL140N4F7AG, MOSFETs Automotive-grade N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET i

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Код товара
8004828733
Артикул
STL140N4F7AG
Бренд
STMicroelectronics
PPAP
Unknown
SVHC
Yes
Brand:
STMicroelectronics
EU RoHS
Compliant with Exemption
Цена по запросу
(от 169,52 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

STMicroelectronics STripFET VII Силовые МОП-транзисторы

Технические параметры

PPAPUnknown
SVHCYes
Brand:STMicroelectronics
EU RoHSCompliant with Exemption
Series:STL140N4F7AG
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Fall Time:5.7 ns
Lead ShapeNo Lead
Rise Time:6.6 ns
Tradename:STripFET
Вес, г0.08
PCB changed8
Part StatusActive
Technology:Si
Channel ModeEnhancement
Channel TypeN
Subcategory:MOSFETs
Channel Mode:Enhancement
ConfigurationSingle Quad Drain Triple Source
Manufacturer:STMicroelectronics
Package Width6
Product Type:MOSFET
Configuration:Single
Package Length5
Qualification:AEC-Q101
Mounting Style:SMD/SMT
Package / Case:PowerFLAT-5x6-8
EDA / CAD ModelsSTL140N4F7AG by Ultra Librarian
Product CategoryPower MOSFET
Supplier PackagePower Flat EP
Transistor Type:1 N-Channel
Maximum IDSS (uA)1
Product Category:MOSFET
Qg - Gate Charge:29 nC
Process TechnologySTripFET F7
СтруктураN-Channel
Number of Channels:1 Channel
Transistor Polarity:N-Channel
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5.7
Typical Rise Time (ns)6.6
Особенностиавтомобильные приложения
Pd - Power Dissipation:111 W
Supplier Temperature GradeAutomotive
Vgs - Gate-Source Voltage:-20 V, +20 V
Number of Elements per Chip1
Typical Turn-On Delay Time:14 ns
Typical Turn-Off Delay Time:19 ns
Id - Continuous Drain Current:120 A
Maximum Operating Temperature:+175 C
Maximum Power Dissipation (mW)111000
Minimum Operating Temperature:-55 C
Typical Gate Charge @ 10V (nC)29
Typical Gate Charge @ Vgs (nC)29@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)19
Rds On - Drain-Source Resistance:2.1 mOhms
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Typical Input Capacitance @ Vds (pF)2300@25V
Vds - Drain-Source Breakdown Voltage:40 V
Maximum Drain Source Resistance (MOhm)2.5@10V
Vgs th - Gate-Source Threshold Voltage:2 V
Maximum Gate Source Leakage Current (nA)100
Factory Pack Quantity: Factory Pack Quantity:3000
Пороговое напряжение на затворе-20 V, +20 V
Максимальное напряжение сток-исток Uси,В40
Максимальный ток сток-исток при 25 С Iси макс..А7
Максимальное напряжение затвор-исток Uзи макс.,В±20В
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on)2.1 мОм

Техническая документация