STL12P6F6, 60V 4A 160mOhm@1.5A,10V 75W 4V@250uA P Channel VDFN-8-Power MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044372896
- Артикул
- STL12P6F6
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Fall Time:
- 3.7 ns
- Rise Time:
- 5.3 ns
- Вес, г
- 0.22
Цена по запросу
(от 140,79 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STMicroelectronics STripFET VI Силовые МОП-транзисторы
Технические параметры
| Brand: | STMicroelectronics |
| Fall Time: | 3.7 ns |
| Rise Time: | 5.3 ns |
| Вес, г | 0.22 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Package/Case: | PowerFLAT-5x6-8 |
| Product Type: | MOSFET |
| Configuration: | Triple |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 75 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6.4 ns |
| Typical Turn-Off Delay Time: | 14 ns |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |