STH410N4F7-2AG, MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062913820
- Артикул
- STH410N4F7-2AG
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series:
- STH410N4F7-2AG
- Fall Time:
- 44.2 ns
- Rise Time:
- 198 ns
Цена по запросу
(от 590 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STMicroelectronics STripFET VII Силовые МОП-транзисторы
Технические параметры
| Brand: | STMicroelectronics |
| Series: | STH410N4F7-2AG |
| Fall Time: | 44.2 ns |
| Rise Time: | 198 ns |
| Tradename: | STripFET |
| Вес, г | 3.96 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Package/Case: | H2PAK-2 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 365 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 35 ns |
| Typical Turn-Off Delay Time: | 108 ns |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1.1 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |