STH320N4F6-6, MOSFETs N-CH 40V 11mOhm 200A STripFET, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062051763
- Артикул
- STH320N4F6-6
- Бренд
- STMicroelectronics
- Type
- null
- Brand:
- STMicroelectronics
- Fall Time:
- 95 ns
- Rise Time:
- 98 ns
Цена по запросу
(от 497,54 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
40 В 200 А 300 Вт 1.3mOhm@80A,10 Напряжение 4 В при 250 мкА нулевые МОП-транзисторы H2PAK-6 соответствуют требованиям ROHS
Технические параметры
| Type | null |
| Brand: | STMicroelectronics |
| Fall Time: | 95 ns |
| Rise Time: | 98 ns |
| Вес, г | 2.4 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-263-7 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 240 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 300W |
| Pd - Power Dissipation: | 300 W |
| Total Gate Charge (Qg@Vgs) | 240nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 28 ns |
| Input Capacitance (Ciss@Vds) | 13.8nF@15V |
| Typical Turn-Off Delay Time: | 190 ns |
| Continuous Drain Current (Id) | 200A |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |