STH260N6F6-2, MOSFETs N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004673231
- Артикул
- STH260N6F6-2
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Brand:
- STMicroelectronics
- RDS-on
- 2.4@10V mOhm
Цена по запросу
(от 459,82 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STMicroelectronics STripFET VI Силовые МОП-транзисторы
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | STMicroelectronics |
| RDS-on | 2.4@10V mOhm |
| Package | 3H2PAK |
| Series: | STH260N6F6-2 |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| Rad Hard | No |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | ±20V |
| Automotive | No |
| Fall Time: | 62.6 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 165 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | STripFET |
| Вес, г | 3.95 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-263-3, D2PAK(2 Leads+Tab), TO-263AB |
| Mounting Style: | SMD/SMT |
| Package / Case: | H2PAK-2 |
| Product Category | Power MOSFET |
| Supplier Package | H2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 183 nC |
| Typical Fall Time | 62.6 ns |
| Typical Rise Time | 165 ns |
| Process Technology | STripFET VI |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55 to 175 ?C |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V |
| Typical Fall Time (ns) | 62.6 |
| Typical Rise Time (ns) | 165 |
| Особенности | - |
| Pd - Power Dissipation: | 300 W |
| Power Dissipation (Max) | 300W(Tc) |
| Supplier Device Package | H2PAK-2 |
| Supplier Temperature Grade | Industrial |
| Typical Turn-On Delay Time | 31.4 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ?20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 144.4 ns |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Maximum Drain Source Voltage | 60 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 120 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 300000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 183 |
| Typical Gate Charge @ Vgs (nC) | 183@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 31.4 |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 144.4 |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 11800 pF @ 25 V |
| Maximum Continuous Drain Current (A) | 180 |
| Typical Input Capacitance @ Vds (pF) | 11800@25V |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 2.4@10V |
| Current - Continuous Drain (Id) @ 25°C | 180A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 180 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0016 Ом |