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STH145N8F7-2AG, 80V 90A 200W 4.5V 4m @10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS

STH145N8F7-2AG, 80V 90A 200W 4.5V 4m @10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS

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Код товара
8060878071
Артикул
STH145N8F7-2AG
Бренд
STMicroelectronics
Tab
Tab
PPAP
Unknown
SVHC
Yes
Mounting
Surface Mount
Цена по запросу
(от 1 230 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор MOSFET N-CH 80V 90A Автомобильный AEC-Q101 3-контактный (2+Tab) H2PAK T/R

Технические параметры

TabTab
PPAPUnknown
SVHCYes
MountingSurface Mount
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г1.72
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.17(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)44
Typical Rise Time (ns)51
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)96
Typical Gate Charge @ Vgs (nC)96@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)26
Maximum Drain-Source Voltage (V)80
Typical Turn-Off Delay Time (ns)82
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)90
Typical Input Capacitance @ Vds (pF)6340@40V
Maximum Drain-Source Resistance (mOhm)4@10V
Maximum Gate-Source Leakage Current (nA)100

Техническая документация