STGYA120M65DF2AG, IGBTs Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in
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- Код товара
- 8004828664
- Артикул
- STGYA120M65DF2AG
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Packaging:
- Tube
- Вес, г
- 5
- Technology:
- Si
Цена по запросу
(от 1 300 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | STMicroelectronics |
| Packaging: | Tube |
| Вес, г | 5 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | Through Hole |
| Package / Case: | MAX-247-3 |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity: | 600 |
| Pd - Power Dissipation: | 625 W |
| Gate-Emitter Leakage Current: | 250 uA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Continuous Collector Current at 25 C: | 160 A |