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STGY40NC60VD, Transistor: IGBT; 600V; 50A; 260W; MAX247

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Код товара
8062506589
Артикул
STGY40NC60VD
Бренд
STMicroelectronics
RoHS
Details
Brand
STMicroelectronics
Width
5.3 mm
Brand:
STMicroelectronics
Цена по запросу
(от 655 ₽)

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Описание

Транзисторный IGBT-чип N-CH 600V 80A 260000 МВт, 3-контактный (3 + вкладки), трубка Max247

Технические параметры

RoHSDetails
BrandSTMicroelectronics
Width5.3 mm
Brand:STMicroelectronics
Height20.3 mm
Length15.9 mm
Series600-650V IGBTs
Series:STGY40NC60VD
PackagingTube
Packaging:Tube
Tradename:PowerMESH
Вес, г5
Technology:Si
ManufacturerSTMicroelectronics
Subcategory:IGBTs
ConfigurationSingle
Manufacturer:STMicroelectronics
Package/Case:Max247-3
Product Type:IGBT Transistors
Configuration:Single
Mounting StyleThrough Hole
Package / CaseMax247-3
Mounting Style:Through Hole
Product CategoryIGBT Transistors
Product Category:IGBT Transistors
Factory Pack Quantity30
Pd - Power Dissipation:260 W
Maximum Gate Emitter Voltage+/-20 V
Maximum Gate Emitter Voltage:-20 V, 20 V
Maximum Operating Temperature+150 C
Minimum Operating Temperature-55 C
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Collector- Emitter Voltage VCEO Max600 V
Continuous Collector Current Ic Max80 A
Collector- Emitter Voltage VCEO Max:600 V
Continuous Collector Current Ic Max:80 A
Collector-Emitter Saturation Voltage:1.9 V
Continuous Collector Current at 25 C:80 A
Factory Pack Quantity: Factory Pack Quantity:600

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