STGW80H65DFB, Транзистор: IGBT; 650В; 80А; 470Вт; TO247-3
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- Код товара
- 8004291103
- Артикул
- STGW80H65DFB
- Бренд
- STMicroelectronics
- RoHS
- Details
- Brand
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series
- 600-650V IGBTs
Цена по запросу
(от 791,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор IGBT, 650 В, 120 А, 469Вт
Технические параметры
| RoHS | Details |
| Brand | STMicroelectronics |
| Brand: | STMicroelectronics |
| Series | 600-650V IGBTs |
| Packaging | Tube |
| Packaging: | Tube |
| Technology | Si |
| Вес, г | 6.9 |
| Technology: | Si |
| Manufacturer | STMicroelectronics |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-247-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Mounting Style: | Through Hole |
| Product Category | IGBT Transistors |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity | 600 |
| Factory Pack Quantity: | 600 |
| Pd - Power Dissipation | 469 W |
| Pd - Power Dissipation: | 469 W |
| Gate-Emitter Leakage Current | 250 nA |
| Maximum Gate Emitter Voltage | 20 V |
| Gate-Emitter Leakage Current: | 250 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Continuous Collector Current Ic Max | 80 A |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Continuous Collector Current Ic Max: | 80 A |
| Continuous Collector Current at 25 C | 120 A |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Continuous Collector Current at 25 C: | 120 A |