STGW80H65DFB-4, IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
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- Код товара
- 8004828625
- Артикул
- STGW80H65DFB-4
- Бренд
- STMicroelectronics
- Type
- FS(Field Stop)
- Brand:
- STMicroelectronics
- Packaging:
- Tube
- Вес, г
- 5
Цена по запросу
(от 1 180 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type | FS(Field Stop) |
| Brand: | STMicroelectronics |
| Packaging: | Tube |
| Вес, г | 5 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | IGBTs |
| Collector Current (Ic) | 120A |
| Factory Pack Quantity: | 600 |
| Power Dissipation (Pd) | 469W |
| Pd - Power Dissipation: | 470 W |
| Turn?on Delay Time (Td(on)) | 84ns |
| Turn?on Switching Loss (Eon) | 2.1mJ |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Total Gate Charge (Qg@Ic,Vge) | 414nC |
| Turn?off Delay Time (Td(off)) | 280ns |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Turn?off Switching Loss (Eoff) | 1.5mJ |
| Diode Reverse Recovery Time (Trr) | 85ns |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Continuous Collector Current at 25 C: | 120 A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V, 80A |