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STGW30M65DF2, Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube

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Код товара
8002236037
Артикул
STGW30M65DF2
Бренд
STMicroelectronics
Tab
Tab
PPAP
No
Brand:
STMicroelectronics
Series:
STGW30M65DF2
Цена по запросу
(от 300 ₽)
Минимальный заказ: 600 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзисторная микросxема IGBT N-CH 650V 60A 258 Вт с 3-контактным разъемом (3 + язычка) TO-247

Технические параметры

TabTab
PPAPNo
Brand:STMicroelectronics
Series:STGW30M65DF2
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
Packaging:Tube
TechnologyField Stop|Trench
Вес, г7.2
PCB changed3
Part StatusActive
Technology:Si
Channel TypeN
Subcategory:IGBTs
ConfigurationSingle
Manufacturer:STMicroelectronics
Product Type:IGBT Transistors
Configuration:Single
Mounting Style:Through Hole
Package / Case:TO-247-3
Supplier PackageTO-247
Product Category:IGBT Transistors
Standard Package NameTO
Pd - Power Dissipation:258 W
Supplier Temperature GradeIndustrial
Gate-Emitter Leakage Current:+/-250 nA
Maximum Gate Emitter Voltage:-20 V, 20 V
Maximum Operating Temperature:+175 C
Maximum Power Dissipation (mW)258
Minimum Operating Temperature:-55 C
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:650 V
Continuous Collector Current Ic Max:60 A
Collector-Emitter Saturation Voltage:1.55 V
Continuous Collector Current at 25 C:60 A
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)250
Factory Pack Quantity: Factory Pack Quantity:600
Typical Collector Emitter Saturation Voltage (V)1.55

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