STGW20NC60VD TO247AC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075232829
- Артикул
- STGW20NC60VD
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- STMicroelectronics
Цена по запросу
(от 710 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 600В 30A 200Вт TO247 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 5.15 mm |
| Brand: | STMicroelectronics |
| Height | 20.15 mm |
| Length | 15.75 mm |
| Series | 600-650V IGBTs |
| EU RoHS | Compliant with Exemption |
| Series: | STGW20NC60VD |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Input Type | Standard |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Technology | Si |
| Вес, г | 1 |
| Gate Charge | 100 nC |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 200 W |
| Technology: | Si |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-247 |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Test Condition | 390V, 20A, 3.3Ohm, 15V |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Product Category | IGBT Transistors |
| Supplier Package | TO-247 |
| Switching Energy | 220µJ(on), 330µJ(off) |
| Product Category: | IGBT Transistors |
| Td (on/off) @ 25°C | 31ns/100ns |
| Factory Pack Quantity | 600 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | TO |
| Pd - Power Dissipation | 200 W |
| Pd - Power Dissipation: | 200 W |
| Supplier Device Package | TO-247-3 |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Transistor Configuration | Single |
| Supplier Temperature Grade | Industrial |
| Reverse Recovery Time (trr) | 44 ns |
| Continuous Collector Current | 30 A |
| Gate-Emitter Leakage Current | +/-100 nA |
| Maximum Gate Emitter Voltage | ±20V |
| Continuous Collector Current: | 30 A |
| Gate-Emitter Leakage Current: | +/-100 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Current - Collector (Ic) (Max) | 60 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Pulsed (Icm) | 150 A |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Collector Emitter Voltage | 600 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current Ic Max | 60 A |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current Ic Max: | 60 A |
| Continuous Collector Current at 25 C | 60 A |
| Maximum Continuous Collector Current | 60 A |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Continuous Collector Current at 25 C: | 60 A |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 60 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Typical Collector Emitter Saturation Voltage (V) | 1.8 |