Моя заявка (0)
STGW20NC60VD, IGBTs N-Ch 600 Volt 30 Amp

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8004828599
Артикул
STGW20NC60VD
Бренд
STMicroelectronics
Tab
Tab
PPAP
No
RoHS
Details
Brand
STMicroelectronics
Цена по запросу
(от 403,39 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор N-МОП, полевой, 600В 30A 200Вт TO247 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT

Технические параметры

TabTab
PPAPNo
RoHSDetails
BrandSTMicroelectronics
Width5.15 mm
Brand:STMicroelectronics
Height20.15 mm
Length15.75 mm
Series600-650V IGBTs
EU RoHSCompliant with Exemption
Series:STGW20NC60VD
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Input TypeStandard
Lead ShapeThrough Hole
Packaging:Tube
TechnologySi
Вес, г39
Gate Charge100 nC
PCB changed3
Part StatusActive
Power - Max200 W
Technology:Si
Channel TypeN
ManufacturerSTMicroelectronics
Package TypeTO-247
Subcategory:IGBTs
КорпусTO-247
ConfigurationSingle
Manufacturer:STMicroelectronics
Mounting TypeThrough Hole
Product Type:IGBT Transistors
Configuration:Single
Mounting StyleThrough Hole
Package / CaseTO-247-3
Test Condition390V, 20A, 3.3Ohm, 15V
Mounting Style:Through Hole
Package / Case:TO-247-3
Product CategoryIGBT Transistors
Supplier PackageTO-247
Switching Energy220µJ(on), 330µJ(off)
Product Category:IGBT Transistors
Td (on/off) @ 25°C31ns/100ns
Factory Pack Quantity600
Operating Temperature-55°C ~ 150°C(TJ)
Standard Package NameTO
Pd - Power Dissipation200 W
Pd - Power Dissipation:200 W
Supplier Device PackageTO-247-3
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Transistor ConfigurationSingle
Supplier Temperature GradeIndustrial
Reverse Recovery Time (trr)44 ns
Continuous Collector Current30 A
Gate-Emitter Leakage Current+/-100 nA
Maximum Gate Emitter Voltage±20V
Continuous Collector Current:30 A
Gate-Emitter Leakage Current:+/-100 nA
Maximum Gate Emitter Voltage:-20 V, 20 V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Current - Collector (Ic) (Max)60 A
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)200
Minimum Operating Temperature:-55 C
Current - Collector Pulsed (Icm)150 A
Maximum Gate Emitter Voltage (V)±20
Maximum Collector Emitter Voltage600 V
Collector- Emitter Voltage VCEO Max600 V
Continuous Collector Current Ic Max60 A
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage2.5 V
Continuous Collector Current Ic Max:60 A
Continuous Collector Current at 25 C60 A
Maximum Continuous Collector Current60 A
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:60 A
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.1
Voltage - Collector Emitter Breakdown (Max)600 V
Factory Pack Quantity: Factory Pack Quantity:600
Рабочая температура (Tj), °C-55…+150
Typical Collector Emitter Saturation Voltage (V)1.8
Наличие встроенного диодаДа
Максимальный ток КЭ при 25°C, A60
Максимальное напряжение КЭ ,В600
Импульсный ток коллектора (Icm), А150
Максимальная рассеиваемая мощность, Вт200
Время задержки включения (td(on)) при при 25°C, нс31
Напряжение насыщения при номинальном токе, В2.5
Время задержки выключения (td(off)) при при 25°C, нс100

Техническая документация