STGP20H60DF, Transistor: IGBT; 600V; 20A; 167W; TO220AB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8032947441
- Артикул
- STGP20H60DF
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- IGBT Type
- Trench Field Stop
- Input Type
- Standard
- Packaging:
- Tube
Цена по запросу
(от 320 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Ограничитель траншейного поля IGBT 600 В 40 А 167 Вт Со сквозным отверстием TO-220
Технические параметры
| Brand: | STMicroelectronics |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Packaging: | Tube |
| Вес, г | 3 |
| Gate Charge | 115 nC |
| Power - Max | 167 W |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Package / Case | TO-220-3 |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Switching Energy | 209µJ(on), 261µJ(off) |
| Product Category: | IGBTs |
| Td (on/off) @ 25°C | 42.5ns/177ns |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 167 W |
| Supplier Device Package | TO-220 |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Reverse Recovery Time (trr) | 90 ns |
| Gate-Emitter Leakage Current: | 250 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Current - Collector (Ic) (Max) | 40 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Pulsed (Icm) | 80 A |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 2 V |
| Continuous Collector Current at 25 C: | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |