STGP10NB60S, Биполярный транзистор IGBT, 600 В, 29 А, 80 Вт

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062570787
- Артикул
- STGP10NB60S
- Бренд
- STMicroelectronics
- RoHS
- Details
- Brand
- STMicroelectronics
- Width
- 4.6 mm
- Height
- 9.15 mm
Цена по запросу
(от 334 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор IGBT, 600 В, 29 А, 80 Вт
Технические параметры
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 4.6 mm |
| Height | 9.15 mm |
| Length | 10.4 mm |
| Series | 600-650V IGBTs |
| Packaging | Tube |
| Technology | Si |
| Вес, г | 2 |
| Manufacturer | STMicroelectronics |
| Configuration | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Product Category | IGBT Transistors |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 80 W |
| Continuous Collector Current | 10 A |
| Gate-Emitter Leakage Current | +/-100 nA |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current Ic Max | 20 A |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Continuous Collector Current at 25 C | 20 A |