STGF20M65DF2, IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004828528
- Артикул
- STGF20M65DF2
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Packaging:
- Tube
- Вес, г
- 2
- Technology:
- Si
Цена по запросу
(от 286 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | STMicroelectronics |
| Packaging: | Tube |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-220FP-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | IGBT Transistors |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 32.6 W |
| Gate-Emitter Leakage Current: | 250 uA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Continuous Collector Current Ic Max: | 40 A |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Continuous Collector Current at 25 C: | 40 A |