Транзистор IGBT STGD6NC60HDT4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062671522
- Артикул
- STGD6NC60HDT4
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- STMicroelectronics
Цена по запросу
(от 150 ₽)
Минимальный заказ: 1650 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
БИПОЛЯРНЫЙ ТРАНЗИСТОР С ИЗОЛИРОВАННЫМ ЗАТВОРОМ, 15A I(C), 600 В (BR)CES, N-КАНАЛЬНЫЙ, TO-252AA
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 6.2 mm |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Series | STGD6NC60HD |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 7 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 |
| Product Category | IGBT Transistors |
| Supplier Package | DPAK |
| Factory Pack Quantity | 2500 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 50 W |
| Supplier Temperature Grade | Industrial |
| Continuous Collector Current | 6 A |
| Gate-Emitter Leakage Current | 100 nA |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 56 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current Ic Max | 15 A |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 15 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.9 |